Resonant-tunneling devices for millimeter-wave generation
نویسندگان
چکیده
منابع مشابه
Digital Circuit Applications of Resonant Tunneling Devices
Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, self-latching logic circuits. As a result, quantum device technology is a promising emerging alternative ...
متن کاملGallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
متن کاملDiscrete control of resonant wave energy devices.
Aiming at amplifying the energy productive motion of wave energy converters (WECs) in response to irregular sea waves, the strategies of discrete control presented here feature some major advantages over continuous control, which is known to require, for optimal operation, a bidirectional power take-off able to re-inject energy into the WEC system during parts of the oscillation cycles. Three d...
متن کاملMulti-threshold Threshold Logic Circuit Design Using Resonant Tunneling Devices
This Letter presents a novel and extremely compact circuit topology able to implement a generalized threshold logic function with two thresholds. The circuit consists of resonant tunnelling diodes (RTDs) and heterostructure field effect transistors (HFETs). Introduction: Resonant tunneling devices are nowadays considered the most mature type of quantum-effect devices. They are already operating...
متن کاملTransmission zero engineering in lateral double-barrier resonant tunneling devices
Transmission zero engineering in lateral double-barrier resonant tunneling devices is investigated. We show that, by inserting a resonant cavity in the quantum well region of a lateral double-barrier resonant tunneling structure and engineering the placement of transmission zero-pole pairs, the current peak-to-valley ratio of the device can be drastically improved at low temperature. An advanta...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Infrared and Millimeter Waves
سال: 1989
ISSN: 0195-9271,1572-9559
DOI: 10.1007/bf01009563